Title :
Broadly Tunable Laser Using Double-Rings Vertically Coupled to a Passive Waveguide
Author :
Kapsalis, Alexandros ; Syvridis, Dimitris ; Hamacher, Michael ; Heidrich, Helmut
Author_Institution :
Dept. of Inf. & Telecommun., Univ. of Athens, Athens, Greece
fDate :
3/1/2010 12:00:00 AM
Abstract :
A widely tunable laser source based on double microrings is presented which exhibits tuning range up to 46 nm. Two microrings consisting of active GaInAsP/InP material are vertically coupled with a straight transparent waveguide using full wafer bonding techniques. Wafer bonding allows the fabrication of ultra short couplers where the critical coupling gap can be epitaxially controlled. The microrings are operated above threshold and act as laser sources forming a coupled cavity system. Their respective radii are chosen to be slightly different, greatly extending the coupled cavity free spectral range (FSR) providing sufficiently high mode suppression ratio ( MSR > 30 dB). The isolation of adjacent rings allows an individual electrical control and enables a wavelength tuning with pm accuracy. The tuning mechanism benefits from the Vernier effect resulting in a broad range of achievable wavelengths in a systematic and repeatable way.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; integrated optics; laser cavity resonators; laser tuning; micro-optics; optical couplers; ring lasers; semiconductor lasers; wafer bonding; waveguide lasers; GaInAsP-InP; Vernier effect; coupled cavity free spectral range; double microrings; passive waveguide; tunable laser source; tunable microring lasers; tuning mechanism; ultrashort couplers; wafer bonding; Couplers; Indium phosphide; Laser modes; Laser tuning; Optical coupling; Optical device fabrication; Optical materials; Tunable circuits and devices; Wafer bonding; Waveguide lasers; Active passive integration; Vernier effect; coupled cavities; injection current controlled tuning; microring lasers; tunable sources; vertical coupling; wafer bonding;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2009.2033714