DocumentCode
1396688
Title
Power measurement at 4 Gc/s by the application of the Hall effect in a semiconductor
Author
Stephenson, L.M. ; Barlow, H.E.M.
Volume
106
Issue
25
fYear
1959
fDate
1/1/1959 12:00:00 AM
Firstpage
27
Lastpage
30
Abstract
When a semiconducting crystal is mounted in the path of an electromagnetic wave, a Hall e.m.f. is set up in the material along the direction of propagation with a value proportional to the power transmitted. The device operates most satisfactorily when the wave impedance is small, so that for a given power the electric-field component is reduced to a minimum. The use of a resonant cavity with the crystal erected in it at a point of strong magnetic field enables such favourable conditions to be established, and this arrangement forms the basis of the wattmeter described. The instrument is capable of measuring power at 4 Gc/s with an error of ±3% from 30 mW to about 20 watts, and with the unique feature that this performance can be achieved at any standing-wave ratio between unity and 0.1 while absorbing only about 3.4% of the power measured. Some experiments on semiconductors mounted directly in a waveguide are also described, showing the possibility in this case of using several crystals in cascade.
Keywords
high-frequency measurement; power measurement; semiconductor devices; wattmeters;
fLanguage
English
Journal_Title
Proceedings of the IEE - Part B: Radio and Electronic Engineering
Publisher
iet
Type
jour
DOI
10.1049/pi-b-1.1959.0009
Filename
5243903
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