DocumentCode :
1396951
Title :
10 GHz high-speed optical interconnection
Author :
Hsu, Shih-Hsien ; Chen, Y.-J. ; You, H.-Z.
Author_Institution :
Dept. of Electron. Eng., Nat. Taiwan Univ. of Sci. & Technol., Taipei, Taiwan
Volume :
46
Issue :
2
fYear :
2010
Firstpage :
149
Lastpage :
150
Abstract :
An AlGaAs/GaAs waveguide is coupled to an InGaAs pin photodetector by a total internal reflector, polyimide process, and a microwave ground-signal-ground coplanar waveguide. This monolithic module achieved 10 GHz 3 dB bandwidth and is suitable for 10 Gbit/s data transmission of optical interconnections.
Keywords :
III-VI semiconductors; MMIC; coplanar waveguides; gallium arsenide; indium compounds; integrated circuit interconnections; integrated optoelectronics; optical interconnections; optical waveguides; photodetectors; AlGaAs-GaAs; InGaAs; bandwidth 10 GHz; bit rate 10 Gbit/s; high-speed optical interconnection; microwave ground-signal-ground coplanar waveguide; pin photodetector; polyimide process; total internal reflector;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2010.1439
Filename :
5399178
Link To Document :
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