Title :
InAs/InP(100) quantum dot laser with high wavelength stability
Author :
Li, S.G. ; Gong, Qiuming ; Lao, Y.F. ; Zhang, Y.G. ; Feng, S.L. ; Wang, H.L.
Author_Institution :
State Key Lab. of Functional Mater. for Inf., Chinese Acad. of Sci., Shanghai, China
Abstract :
InAs/InP(100) quantum dot lasers with lasing wavelength insensitive to operation temperature are demonstrated. Very high wavelength stability of 0.088 nm/K in the temperature range 80-310 K is obtained, which is 6.2 times lower than that of the reference quantum well laser.
Keywords :
III-V semiconductors; indium compounds; laser frequency stability; quantum dot lasers; InAs-InP; high wavelength stability; lasing wavelength; operation temperature; quantum dot laser; temperature 80 K to 310 K;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2010.3005
