• DocumentCode
    1397001
  • Title

    InAs/InP(100) quantum dot laser with high wavelength stability

  • Author

    Li, S.G. ; Gong, Qiuming ; Lao, Y.F. ; Zhang, Y.G. ; Feng, S.L. ; Wang, H.L.

  • Author_Institution
    State Key Lab. of Functional Mater. for Inf., Chinese Acad. of Sci., Shanghai, China
  • Volume
    46
  • Issue
    2
  • fYear
    2010
  • Firstpage
    158
  • Lastpage
    159
  • Abstract
    InAs/InP(100) quantum dot lasers with lasing wavelength insensitive to operation temperature are demonstrated. Very high wavelength stability of 0.088 nm/K in the temperature range 80-310 K is obtained, which is 6.2 times lower than that of the reference quantum well laser.
  • Keywords
    III-V semiconductors; indium compounds; laser frequency stability; quantum dot lasers; InAs-InP; high wavelength stability; lasing wavelength; operation temperature; quantum dot laser; temperature 80 K to 310 K;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2010.3005
  • Filename
    5399184
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1397001