DocumentCode
1397074
Title
A hysteresis model for planar Hall effect in thin films
Author
Chang, Ching-Ray
Author_Institution
Dept. of Phys., Nat. Taiwan Univ., Taipei, Taiwan
Volume
36
Issue
4
fYear
2000
fDate
7/1/2000 12:00:00 AM
Firstpage
1214
Lastpage
1217
Abstract
Based on the single-domain theory, a hysteresis model of the magnetoresistance ratio of magnetic thin films has been studied with different current-voltage configurations. The influence of the distribution of easy axes on the magnetoresistance was also studied, and results indicated that the peak value of magnetoresistance does not occur at coercivity. Results also suggested that both the multidomains and nonuniform current reduce the MR ratio
Keywords
Hall effect; magnetic domains; magnetic hysteresis; magnetic thin films; magnetoresistance; modelling; current-voltage configurations; easy axes distribution; hysteresis model; magnetic thin films; magnetoresistance ratio; multidomains; nonuniform current; planar Hall effect; single-domain theory; Anisotropic magnetoresistance; Coercive force; Giant magnetoresistance; Hall effect; Magnetic field measurement; Magnetic fields; Magnetic films; Magnetic hysteresis; Magnetic materials; Transistors;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/20.877658
Filename
877658
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