Heat analysis of a fuse for semiconductor devices protection using 3-D finite element method

Author

Kawase, Yoshihiro ; Miyatake, Tsutomu ; Ito, Shokichi

Author_Institution

Dept. of Inf. Sci., Gifu Univ., Japan

Volume

36

Issue

4

fYear

2000

fDate

7/1/2000 12:00:00 AM

Firstpage

1377

Lastpage

1380

Abstract

This paper describes numerical analysis of the transient temperature rise of the fuse elements in current-limiting fuses for protecting semiconductor devices such as semiconductor power diodes and thyristors from short-circuit faults. The transient temperature rise is obtained by using 3-D finite element method combining the analysis of current distribution in the fuse with the heat analysis of the fuse. The calculated results show good agreement with the experimental ones. It is shown that this 3-D analysis method is capable of evaluating a new design of current-limiting fuses instead of the conventional trial and error approach

Keywords

electric fuses; finite element analysis; power semiconductor diodes; protection; thermal analysis; thyristors; 3D finite element method; current distribution; current limiting fuse; heat analysis; numerical analysis; semiconductor device protection; semiconductor power diode; short circuit fault; thyristor; transient temperature distribution; Current distribution; Finite element methods; Fuses; Numerical analysis; Protection; Semiconductor devices; Semiconductor diodes; Temperature distribution; Thyristors; Transient analysis;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.877695

Filename

877695