Title :
Practical OEICs based on the monolithic integration of GaAs-InGaP LEDs with commercial GaAs VLSI electronics
Author :
Ahadian, J.F. ; Vaidyanathan, P.T. ; Patterson, S.G. ; Royter, Y. ; Mull, D. ; Petrich, G.S. ; Goodhue, W.D. ; Prasad, S. ; Kolodziejski, L.A. ; Fonstad, C.G., Jr.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA
fDate :
7/1/1998 12:00:00 AM
Abstract :
Recent advances in the epitaxy-on-electronics (EoE) integration process, which combines commercial GaAs VLSI electronics with conventional epitaxial growth and fabrication to produce complex, monolithic optoelectronic integrated circuits (OEICs), have resulted in improved integrated light-emitting diodes (LEDs), eliminated any impact on the preexisting electronics, and increased the robustness of the integration process. An EoE-integrated OEIC combining a photodetector, electronics, and LED is presented which demonstrates the capability of this technology to now satisfy practical optoelectronic systems requirements
Keywords :
III-V semiconductors; VLSI; epitaxial growth; gallium arsenide; gallium compounds; indium compounds; integrated circuit technology; integrated optoelectronics; light emitting diodes; photodetectors; semiconductor growth; EoE-integrated OEIC; GaAs VLSI electronics; GaAs-InGaP; GaAs-InGaP LEDs; LEDs; commercial GaAs VLSI electronics; conventional epitaxial growth; electronics; epitaxy-on-electronics integration process; improved integrated light-emitting diodes; integration process robustness; monolithic integration; monolithic optoelectronic integrated circuits; photodetector; practical OEICs; practical optoelectronic systems requirements; Epitaxial growth; Gallium arsenide; Integrated circuit technology; Light emitting diodes; Monolithic integrated circuits; Optical device fabrication; Optoelectronic devices; Photodetectors; Robustness; Very large scale integration;
Journal_Title :
Quantum Electronics, IEEE Journal of
