Title :
Noise performance of InGaAs-InP quantum-well infrared photodetectors
Author :
Jelen, Christopher ; Slivken, Steven ; David, Thibaut ; Razeghi, Manijeh ; Brown, G.J.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Northwestern Univ., Evanston, IL, USA
fDate :
7/1/1998 12:00:00 AM
Abstract :
Dark current noise measurements were carried out between 10 and 10 4 Hz at T=80 K on two InGaAs-InP quantum-well infrared photodetectors (QWIPs) designed for 8-μm infrared (IR) detection. Using the measured noise data, we have calculated the thermal generation rate, bias-dependant gain, electron trapping probability, and electron diffusion length. The calculated thermal generation rate (~7×10 22 cm-3·s-1) is similar to AlGaAs-GaAs QWIPs with similar peak wavelengths, but the gain is 50× larger, indicating improved transport and carrier lifetime are obtained in the binary InP barriers
Keywords :
III-V semiconductors; carrier lifetime; dark conductivity; electron traps; gallium arsenide; indium compounds; infrared detectors; noise measurement; optical noise; photodetectors; semiconductor device noise; semiconductor quantum wells; 8 mum; 80 K; AlGaAs-GaAs QWIPs; InGaAs-InP; InGaAs-InP quantum-well infrared photodetector noise; bias-dependant gain; binary InP barriers; carrier lifetime; dark current noise measurements; electron diffusion length; electron trapping probability; noise data; peak wavelengths; thermal generation rate; transport lifetime; Dark current; Electron traps; Gain measurement; Infrared detectors; Length measurement; Noise generators; Noise measurement; Photodetectors; Probability; Quantum wells;
Journal_Title :
Quantum Electronics, IEEE Journal of
