The measurement of transistor characteristics at very high frequencies

The paper is concerned with the evaluation of transistors suitable for use as small-signal v.h.f. amplifiers. Parameters governing behaviour at very high frequencies are discussed and measurement techniques are described. Results of measurements at 100 Mc/s on two types of v.h.f. transistor are given; from these data, maximum available power gains are calculated and compared with values measured in a practical amplifier circuit.