DocumentCode :
1397747
Title :
An accelerated ageing experiment on germanium p¿n¿p alloy-type transistors
Author :
Roberts, F.F. ; Henderson, J.C. ; Hastie, R.A.
Volume :
106
Issue :
17
fYear :
1959
fDate :
5/1/1959 12:00:00 AM
Firstpage :
958
Lastpage :
963
Abstract :
A total of 660 transistors, purchased to a specification involving 100% initial testing, including damp heat cycling, have been placed on life test in groups with junction temperatures at 50, 60, 70, 80, 90 and 100°C, with power dissipations such as to give junction temperature rises of 0, 10 or 20°C above the temperature of the mounting, and with collector voltages of 0, ¿1, ¿4 and some of ¿20 volts. From the data so far accumulated and analysed it appears that most of the units will end their lives owing to excessive rise of collector leakage current, that there is no significant correlation between life and initial value of collector leakage current, and that positive correlation exists between deterioration of noise figure at 1 kc/s and deterioration of leakage current, the deterioration being markedly more common for units aged at the higher voltages.
Keywords :
testing; transistors;
fLanguage :
English
Journal_Title :
Proceedings of the IEE - Part B: Electronic and Communication Engineering
Publisher :
iet
ISSN :
0369-8890
Type :
jour
DOI :
10.1049/pi-b-2.1959.0178
Filename :
5244091
Link To Document :
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