• DocumentCode
    1397747
  • Title

    An accelerated ageing experiment on germanium p¿n¿p alloy-type transistors

  • Author

    Roberts, F.F. ; Henderson, J.C. ; Hastie, R.A.

  • Volume
    106
  • Issue
    17
  • fYear
    1959
  • fDate
    5/1/1959 12:00:00 AM
  • Firstpage
    958
  • Lastpage
    963
  • Abstract
    A total of 660 transistors, purchased to a specification involving 100% initial testing, including damp heat cycling, have been placed on life test in groups with junction temperatures at 50, 60, 70, 80, 90 and 100°C, with power dissipations such as to give junction temperature rises of 0, 10 or 20°C above the temperature of the mounting, and with collector voltages of 0, ¿1, ¿4 and some of ¿20 volts. From the data so far accumulated and analysed it appears that most of the units will end their lives owing to excessive rise of collector leakage current, that there is no significant correlation between life and initial value of collector leakage current, and that positive correlation exists between deterioration of noise figure at 1 kc/s and deterioration of leakage current, the deterioration being markedly more common for units aged at the higher voltages.
  • Keywords
    testing; transistors;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEE - Part B: Electronic and Communication Engineering
  • Publisher
    iet
  • ISSN
    0369-8890
  • Type

    jour

  • DOI
    10.1049/pi-b-2.1959.0178
  • Filename
    5244091