Title :
Direct-coupled distributed baseband amplifier IC´s for 40-Gb/s optical communication
Author :
Kimura, Shunji ; Imai, Yuhki ; Miyamoto, Yutaka
Author_Institution :
NTT LSI Labs., Kanagawa, Japan
fDate :
10/1/1996 12:00:00 AM
Abstract :
We have developed GaAs MESFET baseband amplifiers using novel distributed amplification schemes. The key feature of their design is a direct coupling architecture employing two kinds of new distributed DC transformers. One is a distributed level-shift circuit and the other is a distributed source coupled FET logic (SCFL) level transformer. A two-stage distributed amplifier IC cascaded with the distributed level-shift circuit has a gain of 17 dB with a 0-to-30 GHz bandwidth. This is the best performance so far among all reported GaAs MESFET baseband amplifier ICs. A distributed baseband amplifier IC with the distributed SCFL level transformer connected by another distributed level-shift circuit also has a 0-to-30 GHz bandwidth with a gain of 7 dB. This is the first IC with an SCFL interface to have such broad-band characteristics
Keywords :
DC amplifiers; III-V semiconductors; MESFET integrated circuits; MMIC amplifiers; digital communication; distributed amplifiers; field effect MMIC; gallium arsenide; optical communication equipment; wideband amplifiers; 17 dB; 30 GHz; 40 Gbit/s; 7 dB; DC distributed baseband amplifier IC; GaAs; GaAs MESFET baseband amplifiers; broadband characteristics; direct-coupled baseband amplifier; distributed SCFL level transformer; distributed amplification schemes; distributed level-shift circuit; source coupled FET logic; Bandwidth; Baseband; Coupling circuits; Distributed amplifiers; FETs; Gain; Gallium arsenide; Logic circuits; MESFETs; Transformers;
Journal_Title :
Solid-State Circuits, IEEE Journal of
