DocumentCode
1397936
Title
Gas-phase doping of silicon
Author
Goorissen, J. ; Van Run, A.M.J.G.
Author_Institution
N.V. Philips´´ Gloeilampenfabrieken, Natuurkundig Laboratorium, Eindhoven, Netherlands
Volume
106
Issue
17
fYear
1959
fDate
5/1/1959 12:00:00 AM
Firstpage
858
Lastpage
860
Abstract
Single crystals of silicon doped with phosphorus and with a constant resistivity are prepared using a gas-phase doping technique. A constant flux of phosphorus atoms from the gas phase via the liquid into the solid is created by decomposing phosphine in the vicinity of the floating liquid zone. Experimental details and a discussion of the results obtained with phosphine are given.
Keywords
semiconductors;
fLanguage
English
Journal_Title
Proceedings of the IEE - Part B: Electronic and Communication Engineering
Publisher
iet
ISSN
0369-8890
Type
jour
DOI
10.1049/pi-b-2.1959.0159
Filename
5244118
Link To Document