A multiple-state memory cell based on the resonant tunneling diode

Author

Söderström, Jan ; Andersson, Thorwald G.

Author_Institution

Dept. of Phys., Chalmers Univ. of Technol., Goteborg, Sweden

Volume

9

Issue

5

fYear

1988

fDate

5/1/1988 12:00:00 AM

Firstpage

200

Lastpage

202

Abstract

The device consists primarily of several molecular-beam-epitaxy (MBE-) grown GaAs/(AlGa)As resonant tunneling diodes connected in parallel. This device exhibits multiple peaks in the I-V characteristic. When a load resistor is connected, the circuit can be operated in a multiple stable mode. With this concept, implementation of three-state and four-state memory cells are made. In the three-state case the operating points at voltages V/sub 0/=0.27 V, V/sub 1/=0.42 V, and V/sub 2/=0.53 V represent the logic levels 0, 1, and 2. Similarly for the four-state memory cell the logic levels voltages are V/sub 0/=0.35 V, V/sub 1/=0.42 V, V/sub 2/=0.54 V, and V/sub 3/=0.59 V. A suggestion of an integrated device structure using this concept is also presented.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; integrated memory circuits; semiconductor storage; tunnel diodes; GaAs-AlGaAs; I-V characteristic; integrated device structure; load resistor; logic levels; molecular-beam-epitaxy; multiple stable mode; multiple-state memory cell; resonant tunneling diode; Diodes; Gallium arsenide; Logic circuits; Logic devices; Molecular beam epitaxial growth; Resistors; Resonance; Resonant tunneling devices; Stationary state; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.689

Filename

689