Modeling substrate effects in the design of high-speed Si-bipolar ICs

Author

Pfost, Martin ; Rein, Hans-Martin ; Holzwarth, Thomas

Author_Institution

Ruhr-Univ., Bochum, Germany

Volume

31

Issue

10

fYear

1996

fDate

10/1/1996 12:00:00 AM

Firstpage

1493

Lastpage

1501

Abstract

In the design of high-speed IC´s, the influence of the substrate on circuit performance must be considered carefully. Therefore, in this paper the contribution of the p^- substrate and channel stopper to the equivalent circuits of Si-bipolar transistors and bond pads are theoretically and experimentally investigated up to very high frequencies. Improved equivalent substrate circuits, well suited for standard circuit simulators (e,g., SPICE), are derived and checked by numerical simulation using a new simulator (called SUSI). The validity of both the numerical simulation results and the equivalent circuits are verified by on-wafer measurements up to 20 GHz. Finally, the simulator was successfully applied to investigate noise coupling via the substrate

Keywords

bipolar integrated circuits; circuit analysis computing; elemental semiconductors; equivalent circuits; integrated circuit design; integrated circuit measurement; integrated circuit modelling; integrated circuit noise; silicon; substrates; SUSI simulator; bond pads; channel stopper; circuit performance; equivalent substrate circuits; high-speed bipolar ICs; noise coupling; on-wafer measurements; p^- substrate; standard circuit simulators; substrate effects; Bonding; Circuit noise; Circuit optimization; Circuit simulation; Coupling circuits; Equivalent circuits; Frequency; High speed integrated circuits; Numerical simulation; SPICE;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.540060

Filename

540060