Title :
A 5-GHz SiGe HBT return-to-zero comparator for RF A/D conversion
Author :
Gao, Weinan ; Snelgrove, W. Martin ; Kovacic, Stephen J.
Author_Institution :
Dept. of Electron., Carleton Univ., Ottawa, Ont., Canada
fDate :
10/1/1996 12:00:00 AM
Abstract :
This paper presents a monolithic comparator implemented in a 0.5-μm SiGe heterojunction bipolar transistor (HBT) process. The SiGe HBT process provides HBT npn transistors with maximum fT over 40 GHz and fmax over 55 GHz. The comparator circuit employs a resettable slave stage, which was designed to produce return-to-zero output data. Operation with sampling rates up to 5 GHz has been demonstrated by both simulation and experiments. The comparator chip attains an input range of 1.5 V, dissipates 89 mW from a 3-V supply, and occupies a die area of 407×143 μm2. The comparator is intended for analog-to-digital (A/D) conversion of 900 MHz RF signals
Keywords :
Ge-Si alloys; UHF integrated circuits; analogue-digital conversion; bipolar integrated circuits; comparators (circuits); heterojunction bipolar transistors; integrated circuit measurement; semiconductor materials; 0.5 micron; 3 V; 5 GHz; 89 mW; 900 MHz; HBT process; RF A/D conversion; SiGe; die area; resettable slave stage; return-to-zero comparator; return-to-zero output data; sampling rates; Band pass filters; Delta modulation; Germanium silicon alloys; Heterojunction bipolar transistors; High speed integrated circuits; Optical signal processing; Radio frequency; Resonator filters; Sampling methods; Silicon germanium;
Journal_Title :
Solid-State Circuits, IEEE Journal of
