Synchronous optical detection unmasked

Author

Ayadi, K. ; Heremans, P. ; Kiujk, M. ; De Tandt, C. ; Borghs, G. ; Vounchx, R.

Author_Institution

Electron. Dept, Univ. of Brussels, Belgium

Volume

13

Issue

1

fYear

1997

Firstpage

26

Lastpage

28

Abstract

We presented a new silicon optoelectronic receiver in standard CMOS for synchronous detection of light. Two versions were implemented in a 0.7-μm N-well CMOS technology and tested. In the better version, the light-sensitive junctions were the drains of NMOSFETs. This version operated at up to 180 MHz with external 830-nm light pulses of 176 fJ. Our new receiver shows an excellent trade-off between small size, high speed, and good sensitivity, and is therefore an interesting candidate for applications such as digital optical information transfer between VLSI circuits.

Keywords

CMOS integrated circuits; integrated optoelectronics; optical receivers; optical signal detection; 0.7 micron; 176 fJ; 180 MHz; 830 nm; N-well CMOS technology; NMOSFET; Si; VLSI circuit; digital optical information transfer; light pulse; light-sensitive junction; silicon optoelectronic receiver; synchronous optical detection; CMOS technology; High speed optical techniques; MOSFETs; Optical detectors; Optical pulses; Optical receivers; Optical sensors; Silicon; Testing; Very large scale integration;

fLanguage

English

Journal_Title

Circuits and Devices Magazine, IEEE

Publisher

ieee

ISSN

8755-3996

Type

jour

DOI

10.1109/101.566169

Filename

566169