• DocumentCode
    1398428
  • Title

    Spatial uniformity of interface trap distribution in MOSFETs

  • Author

    Saks, Nelson S. ; Ancona, Mario G.

  • Author_Institution
    US Naval Res. Lab., Washington, DC, USA
  • Volume
    37
  • Issue
    4
  • fYear
    1990
  • fDate
    4/1/1990 12:00:00 AM
  • Firstpage
    1057
  • Lastpage
    1063
  • Abstract
    The uniformity of the spatial distribution of (fast) interface traps Nit in small MOS devices was determined using charge pumping on MOSFETs with varying lengths and widths. The number of traps was found to be linearly proportional to both length and width as expected for a macroscopically uniform distribution. No evidence was found for an anomalous Nit distribution at the edges of the source/drain regions; however, the data suggest that there is a higher density of traps along the edges of LOCOS (local oxidation of silicon) field oxides
  • Keywords
    insulated gate field effect transistors; interface electron states; LOCOS field oxides; MOSFETs; charge pumping; fast interface traps; interface trap distribution; macroscopically uniform distribution; small MOS devices; source/drain regions; spatial uniformity; Charge pumps; Current measurement; Fabrication; Hydrogen; Ion implantation; MOS capacitors; MOS devices; MOSFETs; Pollution measurement; Silicon;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.52442
  • Filename
    52442
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1398428