Title :
Micromagnetic Computer Simulated Scaling Effect of S-Shaped Permalloy Nano-Element on Operating Fields for and or or Logic
Author :
Abo, Gavin S. ; Hong, Yang-Ki ; Choi, Byoung-Chul ; Donahue, Michael J. ; Bae, Seok ; Jalli, Jeevan ; Park, Jihoon ; Lee, Jaejin ; Park, Mun-Hyoun ; Gee, Sung-Hoon
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Alabama, Tuscaloosa, AL, USA
fDate :
5/1/2012 12:00:00 AM
Abstract :
The scaling effect of permalloy s-shaped element, a rectangular element with appendages, on operating fields, Hx and Hy, was investigated by micromagnetic computer simulations for and or or logic. The optimized combination of operating fields (Hx, Hy) was found to be (27.7±9.9, -16.7±8.8), (37.9±12.4, -25.9±6.0), and (42.2±8.8, -23.9±4.0) in kA/m for the 100, 50, and 30 nm long s-shaped elements, respectively. As the s-shaped element is scaled down, the allowable deviation from the optimized operating fields becomes smaller and optimized operating fields shift to higher field.
Keywords :
Permalloy; logic gates; magnetic logic; micromagnetics; nanomagnetics; nanostructured materials; AND logic; Fe20Ni80; OR logic; S-shaped permalloy nanoelement; micromagnetic computer simulated scaling effect; optimized operating fields; rectangular element; size 100 nm; size 30 nm; size 50 nm; Coercive force; Magnetic domains; Magnetic hysteresis; Magnetic tunneling; Magnetization; Micromagnetics; Switches; Micromagnetic computer simulation; s-shaped element; spin logic;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2011.2175743
