Abstract :
It is pointed out that in many practical p-n junctions the internal field strengths and dimensions are such that the diffusion equation for the current which is commonly applied is seriously in error. In consequence, it is suggested that no valid analysis has yet been made of p-n junction characteristics, and that a major advance in statistical theory is necessary before this becomes possible. It is also suggested that it is to be expected that there will be a significant difference between germanium and silicon junction devices in their characteristic-material relationships.
