Title :
Efficiency Enhancement in Organic Light-Emitting Devices With a Magnetic Doped Hole-Transport Layer
Author :
Zhang, Dan-Dan ; Feng, Jing ; Wang, Hai ; Liu, Yue-Feng ; Chen, Lu ; Jin, Yu ; Zhong, Yu-Qing ; Bai, Yu ; Chen, Qi-Dai ; Sun, Hong-Bo
Author_Institution :
State Key Lab. on Integrated Optoelectron., Jilin Univ., Changchun, China
Abstract :
Magnetic field effects on tris-(8-hydroxyquinoline) aluminum-based organic light-emitting devices (OLEDs) by employing Fe3O4 as a magnetic dopant in the hole-transport layer (HTL) have been studied. The magnetic doped OLEDs exhibit efficient injection and transport of holes, and its performances are further enhanced after a magnetic field is applied. The enhancement of luminance and current efficiency of 20% and 24% has been obtained from the magnetic doped devices, while they are only 8% and 9%, respectively, for the nondoped devices under an applied magnetic field of 500 mT. Organic magnetoresistance induced by the magnetic doped HTL is the main origin of increased electroluminescence for the magnetic doped OLEDs.
Keywords :
electroluminescence; ferromagnetic materials; magnetic field effects; organic light emitting diodes; efficiency enhancement; electroluminescence; magnetic dopant; magnetic doped hole-transport layer; magnetic field effects; organic light-emitting devices; organic magnetoresistance; Current measurement; Magnetic devices; Magnetic field measurement; Magnetic fields; Organic light emitting diodes; Saturation magnetization; Superconducting magnets; $hbox{Fe}_{3}hbox{O}_{4}$; Organic light-emitting devices (OLEDs); magnetic dopant; magnetic field effects;
Journal_Title :
Photonics Journal, IEEE
DOI :
10.1109/JPHOT.2010.2098435
