• DocumentCode
    1398990
  • Title

    Demonstration of Megapixel Dual-Band QWIP Focal Plane Array

  • Author

    Gunapala, Sarath D. ; Bandara, Sumith V. ; Liu, John K. ; Mumolo, Jason M. ; Ting, David Z. ; Hill, Cory J. ; Nguyen, Jean ; Simolon, Brian ; Woolaway, James ; Wang, Samuel C. ; Li, Weiping ; LeVan, Paul D. ; Tidrow, Meimei Z.

  • Author_Institution
    Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
  • Volume
    46
  • Issue
    2
  • fYear
    2010
  • Firstpage
    285
  • Lastpage
    293
  • Abstract
    Quantum well infrared photodetectors (QWIPs) are well known for their stability, high pixel-pixel uniformity and high pixel operability which are quintessential parameters for large area imaging arrays. In this paper we report the first demonstration of the megapixel-simultaneously-readable and pixel-co-registered dual-band QWIP focal plane array (FPA). The dual-band QWIP device was developed by stacking two multi-quantum-well stacks tuned to absorb two different infrared wavelengths. The full width at half maximum (FWHM) of the midwave infrared (MWIR) band extends from 4.4-5.1 ¿m and FWHM of the long-wave infrared (LWIR) band extends from 7.8-8.8 ¿m. Dual-band QWIP detector arrays were hybridized with direct injection 30 ¿m pixel pitch megapixel dual-band simultaneously readable CMOS read out integrated circuits using the indium bump hybridization technique. The initial dual-band megapixel QWIP FPAs were cooled to 68 K operating temperature. The preliminary data taken from the first megapixel QWIP FPA has shown system NE¿T of 27 and 40 mK for MWIR and LWIR bands, respectively.
  • Keywords
    focal planes; infrared detectors; integrated optoelectronics; photodetectors; quantum well devices; CMOS read out integrated circuits; dual-band megapixel QWIP FPA; focal plane array; full width at half maximum; indium bump hybridization; megapixel dual-band photodetectors; megapixel-simultaneously-readable photodetectors; multiquantum-well stacks; quantum well infrared photodetectors; temperature 68 K; wavelength 4.4 mum to 5.1 mum; CMOS integrated circuits; Detectors; Dual band; Infrared imaging; Optical imaging; Photodetectors; Pixel; Sensor arrays; Stability; Stacking; Infrared detectors; infrared imaging; quantum well devices;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.2009.2024550
  • Filename
    5401117