A charge-based model for short-channel MOS transistor capacitances

Author

Gharabagi, Roobik ; El-Nokali, Mahmoud A.

Author_Institution

Dept. of Electr. Eng., Pittsburgh Univ., PA, USA

Volume

37

Issue

4

fYear

1990

fDate

4/1/1990 12:00:00 AM

Firstpage

1064

Lastpage

1073

Abstract

A model that conserves charge, is valid in the strong inversion regime, and is based on the quasi-static approximation is presented. Major second-order effects such as carrier velocity saturation, mobility degradation, and channel-length modulation are included in the derivation of current and charges. The theoretical predictions of the model are compared to both experimental and numerically simulated data and are found to be in good agreement over a wide range of gate and drain voltages and to confirm many properties that have been observed or predicted

Keywords

capacitance; carrier mobility; insulated gate field effect transistors; semiconductor device models; capacitance; carrier velocity saturation; channel-length modulation; charge-based model; mobility degradation; numerical simulation; quasi-static approximation; short-channel MOS transistor; strong inversion regime; Capacitance; Circuit simulation; Degradation; Helium; MOSFETs; Measurement techniques; Numerical simulation; Predictive models; Semiconductor device modeling; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.52443

Filename

52443