Title :
Gummel-Poon model for single and double heterojunction bipolar transistors
Author :
Huang, C.N. ; Abdel-Motaleb, Lbrahim M.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Northwestern Univ., Evanston, IL, USA
fDate :
4/1/1991 12:00:00 AM
Abstract :
An analytical model for single and double heterojunction bipolar transistors has been developed by employing the concepts of the Gummel-Poon model. The equations for injected minority carrier concentrations are developed based on the thermionic diffusion theory. Linking current and total charges in the base are calculated. The Early voltages are treated as functions of the applied voltages rather than as constants. Tunnelling effect has been considered for abrupt heterojunctions. The resemblance of this model with the SPICE BJT model makes it easy to implement it in SPICE
Keywords :
bipolar integrated circuits; circuit CAD; heterojunction bipolar transistors; minority carriers; semiconductor device models; Early voltages; Gummel-Poon model; SPICE BJT model; abrupt heterojunctions; analytical model; heterojunction bipolar transistors; linking current; minority carrier concentrations; thermionic diffusion theory; total charges;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings G
