Title :
Millimeter-wave GaAs power FET with a pulse-doped InGaAs channel
Author :
Kim, Bumman ; Shih, Hung-Dah ; Wurtele, Marianne ; Tserng, Hua Quen
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
fDate :
5/1/1988 12:00:00 AM
Abstract :
Performance of a GaAs power MESFET has been improved significantly by incorporating a pulse-doped InGaAs layer in the GaAs n-channel. InGaAs provides electron transport properties superior to those of GaAs. The doping level of the GaAs layer can be very high, making it a very-high-transconductance device. Moreover, the conduction-band discontinuity at the heterointerface acts as a potential barrier for electron confinement; therefore, the power gain of the FET is significantly improved. The resulting device delivered a power density of 0.6 W/mm with 14% power-added efficiency and 3.5-dB gain at 60 GHz. At a gain of 5.1 dB, power density was 0.4 W/mm.<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; indium compounds; power transistors; solid-state microwave devices; 14 percent; 3.5 dB; 5.1 dB; 60 GHz; GaAs-InGaAs; MM-wave power FET; conduction-band discontinuity; doping level; electron confinement barrier; electron transport properties; power MESFET; power density; power gain; power-added efficiency; pulse-doped InGaAs channel; very-high-transconductance device; Cutoff frequency; Doping; Electrons; FETs; Gallium arsenide; Indium gallium arsenide; MESFETs; Molecular beam epitaxial growth; Performance gain; Transconductance;
Journal_Title :
Electron Device Letters, IEEE
