Title :
High output power single longitudinal mode graded index separate confinement multiple quantum well InGaAs/InP distributed feedback (GRIN SCH MQW DFB) lasers
Author :
Tanbun-Ek, T. ; Logan, R.A. ; Temkin, H. ; Olsson, N.A. ; Sergent, A.M. ; Wecht, K.W.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
fDate :
7/1/1990 12:00:00 AM
Abstract :
A high continuous-wave (CW) output and high quantum efficiency of 1.5 mu m-wavelength InGaAs/InP graded-index separate-confinement multiple-quantum-well DFB lasers were demonstrated. A threshold current of 45 mA with a maximum output power close to 100 mW and a quantum efficiency of 0.33 mW/mA was obtained. Single-frequency light output with power as high as 16 dBm (40 mW) was launched into a single-mode fiber.<>
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; gradient index optics; indium compounds; laser modes; semiconductor junction lasers; semiconductor quantum wells; 1.5 micron; 100 mW; 45 mA; III-V semiconductors; InGaAs-InP distributed feedback lasers; continuous wave; graded index separate confinement multiple quantum well lasers; high output power single longitudinal mode lasers; quantum efficiency; single frequency light output; single-mode fiber; threshold current; Distributed feedback devices; Fiber lasers; Gratings; Heat treatment; Laser modes; Potential well; Power generation; Power lasers; Quantum well lasers; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
