Title :
GaAs/AlGaAs multiple quantum well GRIN-SCH vertical cavity surface emitting laser diodes
Author :
Wang, Y.H. ; Tai, K. ; Wynn, J.D. ; Hong, M. ; Fischer, R.J. ; Mannaerts, J.P. ; Cho, A.Y.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
7/1/1990 12:00:00 AM
Abstract :
Vertical cavity surface emitting lasers (VCSELs) with GaAs/AlGaAs multiple quantum well (20 wells) graded-index separate-confinement-heterostructure (GRIN-SCH) active regions are discussed. The VCSEL structures, which also contained two Al/sub x/Ga/sub 1-x/As/Al/sub y/Ga/sub 1-y/As distributed Bragg reflectors, were grown by molecular beam epitaxy and had a threshold current and current density at room temperature pulsed excitation of 16 mA and 14 kA/cm/sup 2/, respectively, near 0.85- mu m wavelength. Both single-longitudinal and fundamental transverse mode emission characteristics were observed with a light output greater than 3 mW and a slope efficiency of 0.12 mW/mA.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gradient index optics; molecular beam epitaxial growth; semiconductor growth; semiconductor junction lasers; semiconductor quantum wells; 16 mA; Al/sub x/Ga/sub 1-x/As-Al/sub y/Ga/sub 1-y/As; GaAs-AlGaAs multiple quantum well laser diodes; III-V semiconductors; current density; fundamental transverse mode emission characteristics; light output; molecular beam epitaxy; room temperature pulsed excitation; separate confinement heterostructure graded index laser diodes; separate-confinement-heterostructure; single longitudinal mode emission characteristics; slope efficiency; threshold current; vertical cavity surface emitting laser diodes; Diode lasers; Gallium arsenide; Optical surface waves; Quantum well lasers; Reflectivity; Substrates; Surface emitting lasers; Temperature; Threshold current; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
