Title :
Low threshold current density operation of GaInNAs quantum well lasers grown by metalorganic chemical vapour deposition
Author :
Kawaguchi, M. ; Gouardes, E. ; Schlenker, D. ; Kondo, T. ; Miyamoto, T. ; Koyama, F. ; Iga, K.
Author_Institution :
MicroSyst. Center, Tokyo Inst. of Technol., Japan
fDate :
10/12/2000 12:00:00 AM
Abstract :
A metal organic chemical vapour deposition grown GaInNAs quantum well laser emitting at 1.25 μm is reported. The lowest threshold current density obtained by 50 μm wide stripe lasers was 340 A/cm2 for a cavity length of 1420 μm. Which is almost comparable to the lowest value reported for GaInNAs lasers grown by molecular beam epitaxy. The threshold current density per well was 170 A/cm2, which is the lowest threshold value reported to date
Keywords :
III-V semiconductors; MOCVD; current density; gallium arsenide; gallium compounds; indium compounds; laser beams; optical fabrication; quantum well lasers; 1.25 mum; 1420 mum; 50 mum; GaInNAs; GaInNAs quantum well laser; cavity length; metal organic chemical vapour deposition; molecular beam epitaxy; stripe lasers; threshold current density; threshold value;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20001268
