Title :
Near ultraviolet optically pumped vertical cavity laser
Author :
Zhou, Hailong ; Diagne, M. ; Makarona, E. ; Nurmikko, A.V. ; Han, J. ; Waldrip, K.E. ; Figiel, J.J.
Author_Institution :
Dept. of Phys., Brown Univ., Providence, RI, USA
fDate :
10/12/2000 12:00:00 AM
Abstract :
Optically pumped near ultraviolet vertical cavity laser operation (VCSEL) has been obtained under quasi-continuous wave conditions at room temperature near 383 nm from shallow InGaN/GaN multiple quantum wells (MQWs). Low loss optical resonators were fabricated by using in-situ grown (Al,Ga)N distributed Bragg reflectors that featured strain engineering design for high optical morphology, in combination with low-loss dielectric multilayer mirrors
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium compounds; indium compounds; laser beams; laser cavity resonators; laser mirrors; optical fabrication; optical losses; optical multilayers; optical pumping; quantum well lasers; surface emitting lasers; (Al,Ga)N distributed Bragg reflectors; 298 K; 383 nm; InGaN-GaN; InGaN/GaN multiple quantum wells; VCSEL; distributed Bragg reflectors; fabrication; laser operation; low loss optical resonators; low-loss dielectric multilayer mirrors; near ultraviolet lasers; near ultraviolet optically pumped vertical cavity laser; optical morphology; optically pumped lasers; optically pumped near ultraviolet vertical cavity laser operation; quasi-continuous wave conditions; room temperature; shallow multiple quantum wells; strain engineering design; vertical cavity laser; vertical cavity laser operation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20001257
