Title :
On-wafer continuous-wave operation of InGaN/GaN violet laser diodes
Author :
Hasnain, G. ; Takeuchi, T. ; Schneider, R. ; Song, S. ; Twist, R. ; Blomqvist, M. ; Kocot, C. ; Flory, C.
Author_Institution :
Agilent Technol., Palo Alto, CA, USA
fDate :
10/12/2000 12:00:00 AM
Abstract :
Continuous-wave operation of etched-facet InGaN/GaN multiquantum-well ridge-waveguide laser diodes grown by low pressure MOVPE on a sapphire substrate has been achieved on-wafer for >2 min at 15% above threshold. The threshold current density and voltage were 9.1 kA/cm2 and 7.6 V, respectively, at 15°C, and the lasing wavelength was 400.6 nm
Keywords :
III-V semiconductors; MOCVD; current density; gallium compounds; indium compounds; laser beams; optical fabrication; quantum well lasers; ridge waveguides; vapour phase epitaxial growth; waveguide lasers; 15 C; 2 min; 400.6 nm; 7.6 V; Al2O3; InGaN-GaN; InGaN/GaN violet laser diodes; continuous-wave operation; etched-facet multiquantum-well ridge-waveguide laser diodes; lasing wavelength; low pressure MOVPE; on-wafer continuous-wave operation; sapphire substrate; threshold; threshold current density; voltage;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20001276
