Title :
Ambipolar Gate-Controllable SiNW FETs for Configurable Logic Circuits With Improved Expressive Capability
Author :
Sacchetto, Davide ; Leblebici, Yusuf ; De Micheli, Giovanni
Author_Institution :
Microelectron. Syst. Lab., Ecole Polytech. Fed. de Lausanne, Lausanne, Switzerland
Abstract :
In this letter, we report on the fabrication and characterization of ambipolar silicon-nanowire (SiNW) field-effect transistors (FETs) with a double-independent-gate (DIG) structure for polarity control. Several structures are fabricated, showing the effectiveness of local back gate to enable switchable ambipolar functionality. Moreover, AND, NAND , NOR, XOR, and XNOR binary logic functions can be obtained with a single gate, depending on the encoding values used for the input signals. Repeatable behaviors of DIG SiNW FETs are considered as enablers for ambipolar-controlled logic, with all the benefits related to the maturity of the silicon technology.
Keywords :
field effect transistors; logic circuits; nanowires; silicon; ambipolar gate controllable silicon nanowire FET; configurable logic circuits; double independent gate structure; field effect transistors; polarity control; silicon technology; switchable ambipolar functionality; Charge carrier processes; Dielectrics; FETs; Fabrication; Logic gates; Silicon; Ambipolar control; Schottky barrier; field-effect transistor (FET); nanowire;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2011.2174410
