Title :
InP/InGaAs uni-travelling-carrier photodiode with 310 GHz bandwidth
Author :
Ito, H. ; Furuta, T. ; Kodama, S. ; Ishibashi, T.
Author_Institution :
NTT Photonics Labs., Kanagawa, Japan
fDate :
10/12/2000 12:00:00 AM
Abstract :
The authors have fabricated an InP-InGaAs uni-travelling-carrier photodiode that exhibits a 3 dB bandwidth of 310 GHz and a pulse width (FWHM) of 0.97ps. Both of which are record values for photodetectors operating at a wavelength of 1.55 μm. The average electron velocity in the depletion region is estimated to be 3.0×107 cm/s
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical receivers; photodetectors; photodiodes; 0.97 ps; 1.55 mum; 310 GHz; GHz bandwidth; InP-InGaAs; InP/InGaAs uni-travelling-carrier photodiode; average electron velocity; depletion region; photodetectors; pulse width;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20001274
