DocumentCode
1399725
Title
Improved BSIM3v3 model for RF MOSFET IC simulation
Author
Lee, Seonghearn ; Kim, Cheon Soo ; Yu, Hyun Kyu
Author_Institution
Dept. of Electron. Eng., Hankuk Univ. of Foreign Studies, Kyungki, South Korea
Volume
36
Issue
21
fYear
2000
fDate
10/12/2000 12:00:00 AM
Firstpage
1818
Lastpage
1819
Abstract
An improved BSIM3v3 RF model including external junction diodes to a conventional substrate network is proposed. This model results in much better agreements with the measured output resistance and capacitance than other published models. The accuracy of the model is also demonstrated by observing good agreement between the measured and modelled S-parameters up to 10 GHz
Keywords
MOS integrated circuits; S-parameters; capacitance; integrated circuit modelling; microwave integrated circuits; 10 GHz; BSIM3v3 model; RF MOSFET IC simulation; S-parameters; capacitance; external junction diodes; output resistance; substrate network;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20001280
Filename
878657
Link To Document