Title : 
Monte Carlo harmonic-balance and drift-diffusion harmonic-balance analyses of 100-600 GHz Schottky barrier varactor frequency multipliers
         
        
            Author : 
Lipsey, R.E. ; Jones, S.H. ; Jones, J.R. ; Crowe, T.W. ; Horvath, L.F. ; Bhapkar, U.V. ; Mattauch, R.J.
         
        
            Author_Institution : 
Dept. of Electr. Eng., Virginia Univ., Charlottesville, VA, USA
         
        
        
        
        
            fDate : 
11/1/1997 12:00:00 AM
         
        
        
        
            Abstract : 
To date, high frequency multipliers have been designed and analyzed using harmonic-balance codes incorporating equivalent circuit models for the diodes. These codes, however, are unable to accurately predict circuit performance at frequencies above 100 GHz and do not allow a means for studying the physics of electron transport. In order to analyze these high frequency Schottky doublers, a novel harmonic-balance technique has been integrated into a drift-diffusion numerical simulator and, for the first time, a Monte Carlo numerical device simulator. The unification of the numerical device simulator with the harmonic-balance algorithm allows for the self-consistent study of electron transport phenomena as well as the study of device performance in a given circuit. These combined simulators are tested against experimental data and an equivalent circuit model harmonic-balance approach, and yield superior accuracy with respect to the experimental data
         
        
            Keywords : 
Monte Carlo methods; Schottky diodes; frequency multipliers; millimetre wave frequency convertors; semiconductor device models; varactors; 100 to 600 GHz; Monte Carlo harmonic-balance analysis; Schottky barrier varactor frequency multiplier; drift-diffusion harmonic-balance analsis; electron transport; high frequency Schottky doubler; numerical simulation; Analytical models; Circuit simulation; Circuit testing; Electrons; Equivalent circuits; Frequency; Harmonic analysis; Monte Carlo methods; Numerical simulation; Schottky diodes;
         
        
        
            Journal_Title : 
Electron Devices, IEEE Transactions on