• DocumentCode
    1399778
  • Title

    Analytical expressions for the tunnel current at abrupt semiconductor-semiconductor heterojunctions

  • Author

    Searles, Shawn ; Pulfrey, David L. ; Kleckner, T.C.

  • Author_Institution
    Intel Corp., Hillsboro, OR, USA
  • Volume
    44
  • Issue
    11
  • fYear
    1997
  • fDate
    11/1/1997 12:00:00 AM
  • Firstpage
    1851
  • Lastpage
    1856
  • Abstract
    Analytical expressions for the tunnel current in abrupt semiconductor heterojunctions are derived. These expressions, which give results in good agreement with numerical calculations, should prove helpful in the construction of compact models for devices in which tunneling is important
  • Keywords
    semiconductor heterojunctions; tunnelling; abrupt semiconductor-semiconductor heterojunction; tunnel current; Differential equations; Effective mass; Electron emission; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Schottky barriers; Temperature distribution; Tunneling;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.641352
  • Filename
    641352
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1399778