DocumentCode
1399798
Title
1.3 mu m semiconductor laser power amplifier
Author
Olsson, N.A. ; Cella, T. ; Tzeng, L.D. ; Tench, R.E.
Author_Institution
AT&T Bell Labs., Murray Hill, NJ, USA
Volume
1
Issue
1
fYear
1989
Firstpage
2
Lastpage
3
Abstract
The performance of a 3.4-Gb/s system using a low-power 1.318- mu m distributed-feedback (DFB) laser transmitter and a traveling-wave semiconductor laser power amplifier is studied. The -14.5-dBm, input from a directly modulated DFB laser is boosted to +10.3 dBm, of which +4.8 dBm is coupled into the transmission fiber. The penalty, caused by amplifier noise and pattern effects due to gain saturation, is less than 0.5 dB.<>
Keywords
distributed feedback lasers; laser transitions; semiconductor junction lasers; 1.318 micron; 3.4 Gbit/s; DFB laser; distributed feedback laser; gain saturation; noise; semiconductor laser power amplifier; transmission fiber; Distributed amplifiers; Fiber lasers; Laser noise; Optical coupling; Power amplifiers; Power lasers; Semiconductor device noise; Semiconductor lasers; Semiconductor optical amplifiers; Transmitters;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.87875
Filename
87875
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