DocumentCode :
1399798
Title :
1.3 mu m semiconductor laser power amplifier
Author :
Olsson, N.A. ; Cella, T. ; Tzeng, L.D. ; Tench, R.E.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Volume :
1
Issue :
1
fYear :
1989
Firstpage :
2
Lastpage :
3
Abstract :
The performance of a 3.4-Gb/s system using a low-power 1.318- mu m distributed-feedback (DFB) laser transmitter and a traveling-wave semiconductor laser power amplifier is studied. The -14.5-dBm, input from a directly modulated DFB laser is boosted to +10.3 dBm, of which +4.8 dBm is coupled into the transmission fiber. The penalty, caused by amplifier noise and pattern effects due to gain saturation, is less than 0.5 dB.<>
Keywords :
distributed feedback lasers; laser transitions; semiconductor junction lasers; 1.318 micron; 3.4 Gbit/s; DFB laser; distributed feedback laser; gain saturation; noise; semiconductor laser power amplifier; transmission fiber; Distributed amplifiers; Fiber lasers; Laser noise; Optical coupling; Power amplifiers; Power lasers; Semiconductor device noise; Semiconductor lasers; Semiconductor optical amplifiers; Transmitters;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/68.87875
Filename :
87875
Link To Document :
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