DocumentCode :
1399808
Title :
Strain at Native 
Interface Characterized by Strain-Scanning Second-Harmonic Generation
Author :
Zhao, Ji-Hong ; Su, Wen ; Chen, Qi-Dai ; Jiang, Ying ; Chen, Zhan-Guo ; Jia, Gang ; Sun, Hong-Bo
Author_Institution :
State Key Lab. for Integrated Optoelectron., Jilin Univ., Changchun, China
Volume :
47
Issue :
1
fYear :
2011
Firstpage :
55
Lastpage :
59
Abstract :
A strain-scanning second-harmonic generation technique is proposed for high-sensitivity measurement of weak strain in film surfaces or interfaces. The basic idea is the sequential application of tensile and compressive strains to a strained film sample. From the strain-dependent second-harmonic generation (SHG) intensity, the type of the strain can be easily judged from whether the SHG is enhanced or weakened, and its magnitude can be precisely calibrated by an externally applied strain that is known. Thus, the built-in strain of a SiO2/Si interface could be determined as tensile with a magnitude of 3.07×10-4.
Keywords :
elemental semiconductors; interface phenomena; measurement by laser beam; optical harmonic generation; silicon; silicon compounds; strain measurement; SiO2-Si; SiO2-Si(111) interface; compressive strain; interfacial strain; strain measurement; strain-scanning second-harmonic generation; tensile strain; Force; Frequency conversion; Silicon; Strain measurement; Tensile strain; Biaxial strain; femtosecond laser; native ${rm SiO}_{2}/{rm Si}$
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.2010.2072907
Filename :
5662937
Link To Document :
