High-efficiency AlGaAs/GaAs single-quantum-well semiconductor laser with strained superlattice buffer layer

Author

Imanaka, K. ; Sato, F. ; Imamoto, H. ; Shimura, M.

Author_Institution

OMRON Tateisi Electron. Co., Kyoto, Japan

Volume

1

Issue

1

fYear

1989

Firstpage

8

Lastpage

10

Abstract

The use of a strained superlattice buffer (SSLB) layer composed of a short-period (InGaAs)(GaAs) superlattice in a lattice-matched AlGaAs/GaAs system in order to reduce the internal stress is discussed. A five-times-higher photoluminescence peak intensity has been observed from a single quantum well (SQW) with the SSLB than without the SSLB. A high-quantum efficiency, a small cavity loss, and high-output power operation have been achieved in a narrow ridge-waveguide 770-nm graded-index-separate confinement heterostructure SQW laser diode with the SSLB.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; luminescence of inorganic solids; photoluminescence; semiconductor junction lasers; semiconductor quantum wells; semiconductor superlattices; AlGaAs-GaAs; III-V semiconductors; InGaAs-GaAs; SQW; SSLB; cavity loss; internal stress; laser diode; photoluminescence; ridge-waveguide; single-quantum-well semiconductor laser; strained superlattice buffer layer; Buffer layers; Diode lasers; Gallium arsenide; Internal stresses; Molecular beam epitaxial growth; Photoluminescence; Quantum well lasers; Semiconductor lasers; Semiconductor superlattices; Substrates;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.87878

Filename

87878