DocumentCode
1399830
Title
Reflectivity dependence of threshold current in GaInAsP/InP surface emitting laser
Author
Oshikiri, M. ; Kawasaki, H. ; Koyama, F. ; Iga, K.
Author_Institution
Tokyo Inst. of Technol., Yokohama, Japan
Volume
1
Issue
1
fYear
1989
Firstpage
11
Lastpage
13
Abstract
A systematic study of changing the reflectivity of a Si/SiO/sub 2/ mirror for 1.3- mu m GaInAsP/InP surface-emitting lasers is discussed. An effective threshold current of 4.5 mA at 77 K continuous operation has been obtained. This indicates a possibility of a submilliampere threshold at 77 K and approximately=20 mA at 300 K by optimizing the mirror reflectivity.<>
Keywords
III-V semiconductors; gallium arsenide; indium compounds; laser accessories; mirrors; reflectivity; semiconductor junction lasers; 1.3 micron; 20 mA; 300 K; 4.5 mA; 77 K; GaInAsP-InP; III-V semiconductors; Si-SiO/sub 2/; mirror; reflectivity; surface emitting laser; threshold current; Gold; Indium phosphide; Mirrors; Nonhomogeneous media; Optical refraction; Optical surface waves; Optical variables control; Reflectivity; Surface emitting lasers; Threshold current;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.87879
Filename
87879
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