Characteristics of SOI FET´s under pulsed conditions

Author

Jenkins, Keith A. ; Sun, J.Y.-C. ; Gautier, J.

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

Volume

44

Issue

11

fYear

1997

fDate

11/1/1997 12:00:00 AM

Firstpage

1923

Lastpage

1930

Abstract

A system for measuring output characteristics of FET´s using nanosecond pulses, instead of dc voltage and current measurement, is described. The measurement system is used to obtain the I-V characteristics of silicon-on-insulator (SOI) FET´s without the degradation resulting from self heating. Use of the technique to study partially depleted SOI FET´s with floating bodies shows that under pulsed conditions, their output curves have a history dependence. The physical mechanisms responsible for the history dependence are explained. Further understanding of the physical mechanisms is given by examination of single-shot pulse measurements. The role of transient and time-dependent phenomena in determining I-V curves is elucidated

Keywords

MOSFET; characteristics measurement; silicon-on-insulator; I-V characteristics; I-V curves; SOI FETs; floating bodies; nanosecond pulses; output characteristics; output curves; physical mechanisms; pulsed conditions; self heating; single-shot pulse measurements; time-dependent phenomena; Circuits; Current measurement; FETs; Heating; History; Insulation; Pulse measurements; Silicon on insulator technology; Sun; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.641362

Filename

641362