Title :
High-power broad mesa structure AlGaAs/GaAs single-quantum-well edge-emitting LED
Author :
Takagi, T. ; Imamoto, H. ; Sato, F. ; Imanaka, K. ; Shimura, M.
Author_Institution :
OMRON Tateisi Electron. Co., Kyoto, Japan
Abstract :
An edge-emitting light-emitting diode (LED) with a wide emitting region for optical sensing and information processing which requires slit-shaped light sources is discussed. Through the use of a high-quantum efficiency single-quantum-well structure grown by molecular beam epitaxy an output power as high as 3 mW at an injected current of 100 mA with a 50- mu m-wide mesa structure is achieved at the 780-nm emission wavelength. A uniform and rectangular intensity profile, which is suitable for practical use, is obtained with a mesa-restricted structure.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; light emitting diodes; light sources; 100 mA; 3 mW; 780 nm; AlGaAs-GaAs; III-V semiconductors; edge-emitting LED; information processing; light-emitting diode; mesa structure; molecular beam epitaxy; optical sensing; slit-shaped light sources; Chromium; Etching; Gallium arsenide; Gold; Light emitting diodes; Molecular beam epitaxial growth; Optical sensors; Plasma applications; Power generation; Resists;
Journal_Title :
Photonics Technology Letters, IEEE
