DocumentCode
1399865
Title
Hot-carrier-induced degradation in p-MOSFETs under AC stress
Author
Ong, T.C. ; Seki, Kouichi ; Ko, P.K. ; Hu, Chenming
Author_Institution
Dept. of Electr. & Electron. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Volume
9
Issue
5
fYear
1988
fDate
5/1/1988 12:00:00 AM
Firstpage
211
Lastpage
213
Abstract
Lifetimes under AC stress are calculated with a quasistatic model using parameters extracted from DC stress data. For inverter-like waveforms, the measurement data show reasonable agreement with the simulation results. For waveforms with turnoff transient occurring in the presence of high drain voltage, more degradation than the model predicts is found if the transient is short (>
Keywords
hot carriers; insulated gate field effect transistors; life testing; semiconductor device models; semiconductor device testing; transients; AC stress; high drain voltage; hot carrier induced degradation; inverter-like waveforms; lifetimes; p-MOSFETs; quasistatic model; simulation; turnoff transient; Data mining; Degradation; Electron traps; Hot carriers; Laboratories; MOSFET circuits; Predictive models; Stress measurement; Substrates; Testing;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.693
Filename
693
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