Title :
Hot-carrier-induced degradation in p-MOSFETs under AC stress
Author :
Ong, T.C. ; Seki, Kouichi ; Ko, P.K. ; Hu, Chenming
Author_Institution :
Dept. of Electr. & Electron. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
fDate :
5/1/1988 12:00:00 AM
Abstract :
Lifetimes under AC stress are calculated with a quasistatic model using parameters extracted from DC stress data. For inverter-like waveforms, the measurement data show reasonable agreement with the simulation results. For waveforms with turnoff transient occurring in the presence of high drain voltage, more degradation than the model predicts is found if the transient is short (>
Keywords :
hot carriers; insulated gate field effect transistors; life testing; semiconductor device models; semiconductor device testing; transients; AC stress; high drain voltage; hot carrier induced degradation; inverter-like waveforms; lifetimes; p-MOSFETs; quasistatic model; simulation; turnoff transient; Data mining; Degradation; Electron traps; Hot carriers; Laboratories; MOSFET circuits; Predictive models; Stress measurement; Substrates; Testing;
Journal_Title :
Electron Device Letters, IEEE
