Title :
A SOI-RF-CMOS technology on high resistivity SIMOX substrates for microwave applications to 5 GHz
Author :
Eggert, Dietmar ; Huebler, Peter ; Huerrich, Arnd ; Kueck, Heinz ; Budde, Wolfram ; Vorwerk, Matthias
Author_Institution :
Fraunhofer-Inst. of Microelectron. Circuits & Syst., Dresden, Germany
fDate :
11/1/1997 12:00:00 AM
Abstract :
A silicon-on-insulator (SOI) RF complementary metal-oxide-semiconductor (CMOS) technology for microwave applications up to 5 GHz has been developed. The technology is based on ultra large scale integration (ULSI) CMOS processing using a high resistivity separation through implanted oxygen (SIMOX) substrate of typically 10 kΩcm. Dedicated RF n-channel and RF p-channel MOSFET´s with an effective channel length of 0.20 and 0.40 μm have been fabricated using a multiple gate finger design. Maximum frequencies of operation f max of 46 GHz (NMOS) and 16 GHz (PMOS) have been measured. Metal-Insulator-Metal (MIM) capacitances with up to 63 pF with 70 nF/cm 2, planar inductances with up to 25 nH and a quality factor up to 12 and coplanar waveguides with a loss <2.8 dB/cm at 5 GHz are monolithically integrated in the technology without additional processes and materials. Using this SOI-CMOS technology we have fabricated integrated silicon RF circuits, e.g., amplifiers, oscillators, and mixers, operating in the 2 GHz range
Keywords :
CMOS analogue integrated circuits; MIM devices; Q-factor; SIMOX; coplanar waveguides; field effect MMIC; 0.2 micron; 0.4 micron; 16 GHz; 2 to 5 GHz; 46 GHz; 63 pF; MIM capacitances; SOI-RF-CMOS technology; ULSI CMOS processing; coplanar waveguides; effective channel length; high resistivity SIMOX substrates; microwave amplifiers; microwave applications; microwave mixers; microwave oscillators; multiple gate finger design; planar inductances; quality factor; CMOS process; CMOS technology; Conductivity; Fingers; Integrated circuit technology; MOS devices; Microwave technology; Radio frequency; Silicon on insulator technology; Ultra large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
