Title :
Novel 896-element infrared Schottky detector line array
Author :
Kurianski, J.M. ; Theden, U. ; Green, M.A. ; Storey, J.W.V.
Author_Institution :
Joint Microelectron. Centre, New South Wales Univ., Kensington, NSW, Australia
Abstract :
The application of a mask-level butting technique to the design and fabrication of a very long, monolithic silicide infrared (IR) charge-coupled device (CCD) line array is described. This technique gives a continuous line of 896 IR sensing elements. The number of IR detectors (the length of the array) can be varied as required at the device dicing and packaging stages. The maximum array length is limited only by the silicon wafer size and the processing yield.<>
Keywords :
CCD image sensors; Schottky-barrier diodes; infrared detectors; infrared imaging; integrated circuit technology; 896 element array; IC technology; IR detectors; IR sensing elements; Si wafer size; continuous line; fabrication; infrared Schottky detector line array; long CCD array; mask-level butting technique; maximum array length; monolithic silicide IR CCD line array; processing yield; Australia; Charge coupled devices; Implants; Infrared detectors; Microelectronics; Physics; Sensor arrays; Shift registers; Silicides; Silicon;
Journal_Title :
Electron Device Letters, IEEE
