Thermal optical bistability in InGaAs/InAlAs MQW etalons at 1.5 mu m wavelength

Author

Nonaka, K. ; Kawaguchi, H. ; Kawamura, Y. ; Tsuda, H. ; Kubodera, K.

Author_Institution

Opto-Electron. Labs., NTT Corp., Kanagawa, Japan

Volume

1

Issue

3

fYear

1989

fDate

3/1/1989 12:00:00 AM

Firstpage

55

Lastpage

58

Abstract

The authors report on the fabrication of devices assembled in one unit and the observation of thermal optical bistability with low threshold and high reproducibility using the low-energy side of a 1.54- mu m etalon peak. The devices are InGaAs/InAlAs multi-quantum-well (MQW) nonlinear etalons, whose finesse of 20 was obtained by using a SiO/sub 2//TiO/sub 2/ high-reflectivity coating. The authors also show that the nonlinear characteristics depend on the wavelength of the incident light detuned from the etalon peak. The relation between optical bistable characteristics and incident beam wavelength is studied in detail using a tunable F-center laser.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; optical bistability; semiconductor quantum wells; thermo-optical effects; 1.54 micron; III-V semiconductors; InGaAs-InAlAs; SiO/sub 2/-TiO/sub 2/ coating; fabrication; high reproducibility; incident beam wavelength; low threshold; multiple quantum well nonlinear etalon; thermal optical bistability; tunable F-center laser; Assembly; Coatings; Indium compounds; Indium gallium arsenide; Laser beams; Nonlinear optics; Optical bistability; Optical device fabrication; Quantum well devices; Reproducibility of results;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.87895

Filename

87895