Title :
Thermal optical bistability in InGaAs/InAlAs MQW etalons at 1.5 mu m wavelength
Author :
Nonaka, K. ; Kawaguchi, H. ; Kawamura, Y. ; Tsuda, H. ; Kubodera, K.
Author_Institution :
Opto-Electron. Labs., NTT Corp., Kanagawa, Japan
fDate :
3/1/1989 12:00:00 AM
Abstract :
The authors report on the fabrication of devices assembled in one unit and the observation of thermal optical bistability with low threshold and high reproducibility using the low-energy side of a 1.54- mu m etalon peak. The devices are InGaAs/InAlAs multi-quantum-well (MQW) nonlinear etalons, whose finesse of 20 was obtained by using a SiO/sub 2//TiO/sub 2/ high-reflectivity coating. The authors also show that the nonlinear characteristics depend on the wavelength of the incident light detuned from the etalon peak. The relation between optical bistable characteristics and incident beam wavelength is studied in detail using a tunable F-center laser.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; optical bistability; semiconductor quantum wells; thermo-optical effects; 1.54 micron; III-V semiconductors; InGaAs-InAlAs; SiO/sub 2/-TiO/sub 2/ coating; fabrication; high reproducibility; incident beam wavelength; low threshold; multiple quantum well nonlinear etalon; thermal optical bistability; tunable F-center laser; Assembly; Coatings; Indium compounds; Indium gallium arsenide; Laser beams; Nonlinear optics; Optical bistability; Optical device fabrication; Quantum well devices; Reproducibility of results;
Journal_Title :
Photonics Technology Letters, IEEE
