SIMFCT: a MOS-gated FCT with high voltage-current saturation

Author

Sridhar, S. ; Baliga, B.J.

Author_Institution

Power Semicond. Res. Center, North Carolina State Univ., Raleigh, NC, USA

Volume

44

Issue

11

fYear

1997

fDate

11/1/1997 12:00:00 AM

Firstpage

2017

Lastpage

2021

Abstract

This paper describes the SIMFCT: a new MOS-gated power device in which SIMOX technology is used to integrate a series MOSFET with a vertical FCT structure. The SIMFCT, exhibits high voltage-current saturation beyond the breakdown voltage of the lateral series MOSFET, and since it does not have a parasitic thyristor, it possesses a superior FBSOA when compared to the IGBT. The physics of device operation, results of two-dimensional numerical simulations and experimentally measured characteristics on SIMFCT structures fabricated using a nine mask SIMOX Smart Power process are presented

Keywords

MOS-controlled thyristors; SIMOX; masks; power integrated circuits; semiconductor device models; FBSOA; MOS-gated FCT; SIMFCT; SIMOX technology; device operation; mask; series MOSFET; smart power process; two-dimensional numerical simulations; vertical FCT structure; voltage-current saturation; Anodes; Cathodes; Insulated gate bipolar transistors; Low voltage; MOSFET circuits; Numerical simulation; Physics; Power MOSFET; Thyristors; Voltage control;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.641374

Filename

641374