Title :
SIMFCT: a MOS-gated FCT with high voltage-current saturation
Author :
Sridhar, S. ; Baliga, B.J.
Author_Institution :
Power Semicond. Res. Center, North Carolina State Univ., Raleigh, NC, USA
fDate :
11/1/1997 12:00:00 AM
Abstract :
This paper describes the SIMFCT: a new MOS-gated power device in which SIMOX technology is used to integrate a series MOSFET with a vertical FCT structure. The SIMFCT, exhibits high voltage-current saturation beyond the breakdown voltage of the lateral series MOSFET, and since it does not have a parasitic thyristor, it possesses a superior FBSOA when compared to the IGBT. The physics of device operation, results of two-dimensional numerical simulations and experimentally measured characteristics on SIMFCT structures fabricated using a nine mask SIMOX Smart Power process are presented
Keywords :
MOS-controlled thyristors; SIMOX; masks; power integrated circuits; semiconductor device models; FBSOA; MOS-gated FCT; SIMFCT; SIMOX technology; device operation; mask; series MOSFET; smart power process; two-dimensional numerical simulations; vertical FCT structure; voltage-current saturation; Anodes; Cathodes; Insulated gate bipolar transistors; Low voltage; MOSFET circuits; Numerical simulation; Physics; Power MOSFET; Thyristors; Voltage control;
Journal_Title :
Electron Devices, IEEE Transactions on
