DocumentCode
1399940
Title
Abrupt negative differential resistance in ungated GaAs FET´s
Author
Ahmed, M.M.
Author_Institution
Cavendish Lab., Cambridge Univ., UK
Volume
44
Issue
11
fYear
1997
fDate
11/1/1997 12:00:00 AM
Firstpage
2031
Lastpage
2033
Abstract
We report on an investigation of an abrupt negative differential resistance (NDR) observed in the I-V characteristics of ungated GaAs FET´s with submicron gate recess trenches. The NDR is a sensitive function of drain voltage, and its magnitude on the current axis and position on the voltage axis are functions of gate recess depth. The effect is attributed to fast intervalley scattering because of a modified electric field as etching proceeds, and it is possible that it can be used to implement high-speed logic circuits
Keywords
III-V semiconductors; etching; field effect transistors; gallium arsenide; logic gates; negative resistance devices; GaAs; I-V characteristics; abrupt negative differential resistance; current axis; drain voltage; etching; gate recess depth; high-speed logic circuits; intervalley scattering; modified electric field; submicron gate recess trenches; ungated FET; voltage axis; Chemicals; Electrons; FETs; Gallium arsenide; Heterojunction bipolar transistors; Indium tin oxide; Scattering; Semiconductor diodes; Silicon carbide; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.641377
Filename
641377
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