Title :
Abrupt negative differential resistance in ungated GaAs FET´s
Author_Institution :
Cavendish Lab., Cambridge Univ., UK
fDate :
11/1/1997 12:00:00 AM
Abstract :
We report on an investigation of an abrupt negative differential resistance (NDR) observed in the I-V characteristics of ungated GaAs FET´s with submicron gate recess trenches. The NDR is a sensitive function of drain voltage, and its magnitude on the current axis and position on the voltage axis are functions of gate recess depth. The effect is attributed to fast intervalley scattering because of a modified electric field as etching proceeds, and it is possible that it can be used to implement high-speed logic circuits
Keywords :
III-V semiconductors; etching; field effect transistors; gallium arsenide; logic gates; negative resistance devices; GaAs; I-V characteristics; abrupt negative differential resistance; current axis; drain voltage; etching; gate recess depth; high-speed logic circuits; intervalley scattering; modified electric field; submicron gate recess trenches; ungated FET; voltage axis; Chemicals; Electrons; FETs; Gallium arsenide; Heterojunction bipolar transistors; Indium tin oxide; Scattering; Semiconductor diodes; Silicon carbide; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
