High-frequency small-signal and large-signal characteristics of resonant tunneling high electron mobility transistors (RTHEMTs)

Author

Chen, Kevin Jing ; Maezawa, Koichi ; Yamamoto, Masafumi

Author_Institution

Dept. of Electron. Eng., City Univ. of Hong Kong, Kowloon, Hong Kong

Volume

44

Issue

11

fYear

1997

fDate

11/1/1997 12:00:00 AM

Firstpage

2038

Lastpage

2040

Abstract

High-frequency characteristics of a highly functional InP-based resonant-tunneling high electron mobility transistor (RTHEMT) are reported in this paper. Based on small-signal S-parameter measurement, a maximum current gain cutoff frequency f_T of 28.6 GHz and a maximum power gain cutoff frequency f_max of 90 GHz were obtained for an RTHEMT with a 0.7 μm gate length. Large-signal characteristics are also reported, showing the potential of RTHEMT´s for frequency multiplier applications featuring high-order harmonics multiplication with high conversion efficiency

Keywords

III-V semiconductors; S-parameters; high electron mobility transistors; indium compounds; microwave field effect transistors; microwave frequency convertors; resonant tunnelling transistors; 0.7 micron; 28.6 GHz; 90 GHz; InP; RTHEMT; S-parameter measurement; conversion efficiency; current gain cutoff frequency; frequency multiplier applications; high-frequency characteristics; high-order harmonics multiplication; large-signal characteristics; power gain cutoff frequency; resonant tunneling high electron mobility transistors; small-signal characteristics; Current measurement; Cutoff frequency; Frequency measurement; Gain measurement; HEMTs; Length measurement; MODFETs; Power measurement; Resonant tunneling devices; Scattering parameters;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.641380

Filename

641380