Title :
A hot-carrier degradation mechanism and electrical characteristics in S4D n-MOSFET´s
Author :
Yoshitomi, Takashi ; Saito, Masanobu ; Ohguro, Tatsuya ; Ono, Mizuki ; Momose, Hisayo Sasaki ; Morifuji, Eiji ; Morimoto, Toyota ; Katsumata, Yasuhiro ; Iwai, Hiroshi
Author_Institution :
Microelectron. Eng. Lab., Toshiba Corp., Kawasaki, Japan
fDate :
11/1/1997 12:00:00 AM
Abstract :
A silicided silicon-sidewall source and drain (S4D) nMOSFET is demonstrated and its hot carrier reliability is investigated for the first time. This S4D nMOSFET exhibited high drain current and well-suppressed short channel effects concurrently. In spite of the impact ionization rate issue, the S4D structure offers a major improvement in current and transconductance degradations as compared with the LDD structure. The mechanism of the improved hot carrier reliability is explained using a two-dimensional (2-D) simulation
Keywords :
MOSFET; hot carriers; impact ionisation; semiconductor device reliability; current degradation; electrical characteristics; high drain current; hot carrier reliability; hot-carrier degradation mechanism; impact ionization rate; short channel effect suppression; silicided silicon-sidewall source/drain nMOSFET; transconductance degradation; two-dimensional simulation; Degradation; Electric variables; Etching; Hot carriers; Impact ionization; MOSFET circuits; Silicidation; Silicon; Transconductance; Two dimensional displays;
Journal_Title :
Electron Devices, IEEE Transactions on
