• DocumentCode
    1399977
  • Title

    A hot-carrier degradation mechanism and electrical characteristics in S4D n-MOSFET´s

  • Author

    Yoshitomi, Takashi ; Saito, Masanobu ; Ohguro, Tatsuya ; Ono, Mizuki ; Momose, Hisayo Sasaki ; Morifuji, Eiji ; Morimoto, Toyota ; Katsumata, Yasuhiro ; Iwai, Hiroshi

  • Author_Institution
    Microelectron. Eng. Lab., Toshiba Corp., Kawasaki, Japan
  • Volume
    44
  • Issue
    11
  • fYear
    1997
  • fDate
    11/1/1997 12:00:00 AM
  • Firstpage
    2053
  • Lastpage
    2058
  • Abstract
    A silicided silicon-sidewall source and drain (S4D) nMOSFET is demonstrated and its hot carrier reliability is investigated for the first time. This S4D nMOSFET exhibited high drain current and well-suppressed short channel effects concurrently. In spite of the impact ionization rate issue, the S4D structure offers a major improvement in current and transconductance degradations as compared with the LDD structure. The mechanism of the improved hot carrier reliability is explained using a two-dimensional (2-D) simulation
  • Keywords
    MOSFET; hot carriers; impact ionisation; semiconductor device reliability; current degradation; electrical characteristics; high drain current; hot carrier reliability; hot-carrier degradation mechanism; impact ionization rate; short channel effect suppression; silicided silicon-sidewall source/drain nMOSFET; transconductance degradation; two-dimensional simulation; Degradation; Electric variables; Etching; Hot carriers; Impact ionization; MOSFET circuits; Silicidation; Silicon; Transconductance; Two dimensional displays;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.641383
  • Filename
    641383
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1399977