GaAs/GaAlAs asymmetric Mach-Zehnder demultiplexer with reduced polarization dependence

Author

Yi-Yan, A. ; Deri, R.J. ; Seto, M. ; Hawkins, R.J.

Author_Institution

Bellcore, Red Bank, NJ, USA

Volume

1

Issue

4

fYear

1989

fDate

4/1/1989 12:00:00 AM

Firstpage

83

Lastpage

85

Abstract

A two-channel GaAs/AlGaAs asymmetric Mach-Zehnder wavelength demultiplexer with reduced polarization dependence was demonstrated. The device was fabricated on a single heterostructure comprising a 1.45- mu m-thick layer of GaAs on a 6.0- mu m-thick Ga/sub 0.85/Al/sub 0.15/As buffer layer. The epitaxial layers were grown by MOCVD (metalorganic chemical vapor deposition) on an n/sup +/ GaAs substrate. The single-mode rib waveguides, 3 mu m wide and 0.29 mu m high, were fabricated using standard photolithographic techniques followed by chemical etch and removal of the resist mask. Extinction ratios of 24.1 dB for transverse electric (TE) and 22.5 dB for transverse magnetic (TM) polarized light were measured on a device with an anti-reflection coating on its input and output facets. The active length of the device is approximately 6.5 mm and total loss of 1.1 dB was obtained in a 16-mm-long chip.<>

Keywords

III-V semiconductors; aluminium compounds; chemical vapour deposition; gallium arsenide; integrated optics; multiplexing equipment; optical communication equipment; optical waveguides; optical workshop techniques; photolithography; semiconductor growth; 1.1 dB; 1.45 micron; 16 mm; 6 micron; GaAs-GaAlAs; MOCVD; active length; anti-reflection coating; asymmetric Mach-Zehnder demultiplexer; buffer layer; chemical etch; epitaxial layers; extinction ratios; input facets; metalorganic chemical vapor deposition; output facets; photolithographic techniques; reduced polarization dependence; resist mask; semiconductor; single heterostructure; single-mode rib waveguides; transverse electric polarised light; transverse magnetic polarised light; two channel device; Buffer layers; Chemical vapor deposition; Epitaxial layers; Etching; Extinction ratio; Gallium arsenide; MOCVD; Polarization; Resists; Substrates;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.87910

Filename

87910