Title :
A 30-GHz fT quasi-self-aligned single-poly bipolar technology
Author :
De Pontcharra, Jean ; Behouche, Evelyne ; Ailloud, Laurence ; Thomas, Danielle ; Vendrame, Loris ; Gravier, Thierry ; Chantre, Alain
Author_Institution :
CEA, Centre d´´Etudes Nucleaires de Grenoble, France
fDate :
11/1/1997 12:00:00 AM
Abstract :
In this paper, we report the state-of-the-art results obtained in quasi-self-aligned (QSA) single polysilicon NPN bipolar transistors fabricated within a low-complexity 0.5-μm CMOS process. Our devices demonstrate nearly ideal static characteristics and very good frequency performance. In fact, the obtained 30-GHz maximum fT and 4.1 V breakdown voltage are comparable to the best reported results for single-poly self-aligned (SA) transistors. Some details of the technological process as well as statistical measurements performed on the different optimization splits are presented. The fT and f max on-wafer high-frequency measurements are discussed in terms of reproducibility, sensitivity to process parameters, and device geometry
Keywords :
BiCMOS integrated circuits; characteristics measurement; elemental semiconductors; ion implantation; microwave bipolar transistors; silicon; 0.5 mum; 30 GHz; 4.1 V; BiCMOS technology; breakdown voltage; cutoff frequency; device geometry; frequency performance; low-complexity CMOS process; maximum frequency of oscillation; nearly ideal static characteristics; on-wafer high-frequency measurements; optimization splits; process parameter sensitivity; quasi-self-aligned single polysilicon NPN bipolar transistors; reproducibility; small signal current gain; statistical measurements; technological process; Bipolar transistors; CMOS process; CMOS technology; Dry etching; Frequency; Implants; Performance evaluation; Protection; Reproducibility of results; Resists;
Journal_Title :
Electron Devices, IEEE Transactions on
